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N-Channel Enhancement Mode Dual DMOS FET
CORPORATION
SD411
FEATURES DESCRIPTION The SD411 is constructed utilizing Calogic's high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent choice for instrumentation, communication, RF and Video designs. ORDERING INFOMATION APPLICATIONS Part Package Temperature Range -55oC to +150oC -55oC to +150oC
* Normally "OFF" Configuration * High Speed Switching. . . . . . . . . . under 1 ns (typically) * Ultra Low Capacitance . . . . . . . . . ciss <3.5 pf (typically) * Tight Matching Characteristics * Pin Compatible to Industry Standard
Dual JFETs with Addition of Substrate Bias Pin
* Wideband Differential Amplifiers * Cascode Amplifiers Balanced Mixers * High Intercept Point * Oscillators * High Speed Analog Comparators
PIN CONFIGURATION
SD411 TO-78 Hermetic Package XSD411 Sorted Chips in Carriers
TO-78
1 2 3 4 5 6 7
SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2
45 3 2 1
6 7
BOTTOM VIEW
C S2 G1 D2 D1 G2 S1
CD2
SD411
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) VDS VSD VDB VSB VGD VGS VGB VG1G2 VD1D2 VS1S2 ID Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +20V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +10V Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +25V Gate-Body Voltage . . . . . . . . . . . . . . . . . . . . . . . . +25V Gate-to-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . +25V Drain-to-Drain Voltage . . . . . . . . . . . . . . . . . . . . . +20V Source-to-Source Voltage . . . . . . . . . . . . . . . . . . +15V Continuous Drain Current . . . . . . . . . . . . . . . . +50 mA PD PD Tj TS TL Device Dissipation (each side). . . . . . . . . . . . 360 mW Derating Factor . . . . . . . . . . . . . . . . . . . . 2.88 mW/ oC Total Device Dissipation . . . . . . . . . . . . . . . . 500 mW Derating Factor . . . . . . . . . . . . . . . . . . . . . . . 4 mW/oC Operating Junction Temperature Range . . . . . . . . . . . . . . . . -55 to +125oC Storage Temperature Range . . . . . . . . . -55 to +150oC Lead Temperature (1/16' from mounting surface for 10 sec.). . . . . . . . . . . . . . . . . . . . . . +260oC
ELECTRICAL CHARACTERISTICS(TA = +25oC per side unless otherwise noted)
SYMBOL STATIC BVDS BVSD BVDB BVSB IDSX IGBS VGS(th) rDS(ON) DYNAMIC gfs Ciss Coss Crss C(gs + sb) MATCH | VGS1 - VGS2 | | VGS1 - VDS2 | T Differential Gate Source Voltage Differential Drift 25 25 mV V/ C
o
CHARACTERISTIC
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Drain Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Body Breakdown Voltage Source-Body Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current Gate-Source Threshold Voltage Drain-Source ON Resistance (1)
20 10 V 25 15 0.7 10 1.0 0.5 1.0 2.0 70 nA A V ohms
ID = 10 nA, VGS = VBS = -5V IS = 10 nA, VGD = VBD = -5V ID = 10 nA, VGB = 0 Source Open IS = 10A, VGB = 0 Drain Open VDS = 20V, VGS = VBS = -5V VGS = 25V, VDB = VSB = 0 ID = 1.0A, VDS = VGS, VSB = 0 ID = 1.0mA, VGS = 5.0V, VSB = 0
Common-Source Forward Transconductance(1) Common-Source Input Capacitance Common-Source Output Capacitance Common Source Reverse Transfer Capacitance Source Node Capacitance
10
12 3.5 1.2 0.3 4.5
mS
VDS = 10V, ID = 20mA, VSB = 0 f = 1KHZ
pF
VDS = 10V, VGS = VBS = 0 f = 1MHZ
VDS = 10V ID = 5.0mA TA = -55oC to VSB = 0 +125Co
NOTE 1: Pulse Test, 80sec, 1% Duty Cycle

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